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. 4GB 1600MHz DDR3L Non-ECC CL11 SODIMM 1.35VInternal memory . 4 GB. Internal memory type . DDR3. Memory clock speed . 1600 MHz. Component for . Notebook. ECC . No . Memory form factor . 204-pin SO-DIMM. Memory layout (modules x size) . 1 x 4 GB. CAS latency . CL11. Memory voltage . 1.35; 1.5 V. Registered . No . Memory bus . 64 bit. Lead plating . Gold. Module configuration . 512M X 64. Memory . Row cycle time . 48.125 ns. Refresh row cycle time . 260 ns. Row active time . 35 ns. Operational conditions . Operating temperature (T-T) . 0 - 85.
